Hameed Ur Rehman | Micro-LEDs | Best Researcher Award

Published on by Scientific World Research Awards

Best Researcher Award

Hameed Ur Rehman — The Chinese University of Hong Kong, Shenzhen, China

Hameed Ur Rehman
Affiliation The Chinese University of Hong Kong, Shenzhen
Country China
Scopus ID 57762532400
Documents 15
Citations 98
h-index 7
Subject Area Micro-LEDs
Event Scientific World Research Awards

Hameed Ur Rehman is a researcher working in semiconductor optoelectronics, with research activities encompassing Micro-LEDs, light-emitting devices and III-nitride semiconductor structures. His published work also addresses deep-ultraviolet laser diodes and related semiconductor device engineering. [1]

Abstract

This academic recognition profile presents Hameed Ur Rehman in the context of the Best Researcher Award, emphasizing research associated with Micro-LEDs and semiconductor optoelectronic devices. Available scholarly records indicate work spanning III-nitride materials, LEDs and deep-ultraviolet laser structures. [2]

Keywords

Micro-LEDs; semiconductor optoelectronics; III-nitride semiconductors; light-emitting diodes; laser diodes; quantum wells; deep-ultraviolet photonics.

Introduction

Micro-LED research is an interdisciplinary area connecting semiconductor physics, optoelectronics, device engineering and advanced display technologies. Research in this field includes optimization of quantum structures, carrier transport and optical performance. [3]

Research Profile

Rehman’s research profile includes semiconductor device physics and optoelectronic structures, with reported work on LEDs, Micro-LED-related technologies and III-nitride laser devices. His publication record also includes investigations of AlGaN and BGaN structures for ultraviolet emission. [4]

Research Contributions

Reported contributions include studies of quantum barriers, electron-blocking layers and carrier behavior in III-nitride devices. Such investigations are relevant to improving the optical and electrical characteristics of semiconductor light sources and related photonic devices. [5]

Publications

Selected publications include research on AlGaN deep-ultraviolet laser diodes and quantum-well structures. A documented 2025 article in Optics and Laser Technology examined the design and improvement of W-AlGaN/B-AlGaN quantum wells and electron-blocking layers for deep-ultraviolet emission. [5]

Research Impact

The bibliometric information records 15 documents, 98 citations and an h-index of 7. These indicators provide a quantitative snapshot of scholarly activity, while publication topics demonstrate engagement with semiconductor optoelectronics and advanced light-emitting technologies.

Award Suitability

The Best Researcher Award profile is academically aligned with research activity in Micro-LEDs and semiconductor optoelectronics. The documented publication themes, institutional affiliation and supplied bibliometric indicators provide relevant evidence for consideration within a scientific research recognition framework.

Conclusion

Hameed Ur Rehman’s documented research encompasses Micro-LED-related semiconductor technologies, III-nitride devices and ultraviolet optoelectronics. His publication activity and bibliometric record support a research profile relevant to contemporary semiconductor and photonic-device studies.

References

    1. Elsevier. (n.d.). Scopus author details: Hameed Ur Rehman, Author ID 57762532400. Scopus.
      https://www.scopus.com/authid/detail.uri?authorId=57762532400
    2. Rehman, H. U., et al. (2025). A design and improvement in synergy between un-doped W-AlxGa1-xN/B-AlyGa1-yN quantum wells and electron blocking layers for DUV emission. Optics and Laser Technology, 181, 112025.
      https://doi.org/10.1016/j.optlastec.2024.112025
    3. Rehman, H. U., Rahman, N. U., Haq, I., Wang, F., & Liu, Y. (2024). Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission. Optics & Laser Technology, 175, 110828.
      https://doi.org/10.1016/j.optlastec.2024.110828
    4. Rehman, H. U., Bi, W., Rahman, N. U., et al. (2024). Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL techniques. Physica Scripta.
      https://doi.org/10.1088/1402-4896/ad185f
    5. Rehman, H. U., Bi, W., Rahman, N. U., et al. (2025). Performance Optimization of (InxGa1-xN QWs/GaN LQB) Structures for Vertical-Cavity Surface-Emitting Lasers. Journal of Luminescence.
      https://doi.org/10.1016/j.jlumin.2025.121512